PART |
Description |
Maker |
MGFC44V6472 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC44V6472_97 MGFC44V6472 MGFC44V647297 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC44V5964 C445964 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC44V5964_97 MGFC44V5964 MGFC44V596497 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC36V6472A04 MGFC36V6472A |
6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC45V3642A_04 MGFC45V3642A MGFC45V3642A04 |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC41V3642_04 MGFC41V3642 |
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V6472A |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V6472A C406472A |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET From old datasheet system
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|